VN2410 1A 240V N-Channel DMOS FET – Datasheet

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VN2410 1A 240V N-Channel DMOS FET enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

VN2410 Pinout

VN2410 Pin Configuration

Pin NoPin Name
1Source
2Gate
3Drain

VN2410 Key Features

  • Free from secondary breakdown
  • Low power drive requirement
  • Ease of paralleling
  • Low CISS and fast switching speeds
  • Excellent thermal stability
  • Integral Source-Drain diode
  • High input impedance and high gain
  • Complementary N- and P-channel devices
  • Type Designator: VN2410
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel

VN2410 Specification

Id (A)Pd (W)Vds (max)Rds (on)Vgs (max)
112401020

VN2410 Equivalent/Alternative

  • VN2106, VN2110, VN2210N2, VN2210N3, VN2222KM, VN2222L

Application

  • Motor Controls
  • Converters
  • Amplifiers
  • Switches
  • Power Supply Circuits
  • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

You can download this datasheet for VN2410L 1A 240V N-Channel DMOS FET from the link given below: