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The TIP122 is silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intended for use in power linear and switching applications
TIP122 Pinout
TIP122 Pin Configuration
Pin No | Pin Name |
---|---|
1 | Base |
2 | Collector |
3 | Emitter |
4 | Case (Collector) |
TIP122 Key Features
- Collector Current Capability IC=5A
- Collector Emitter Voltage VCEO=100V
- Medium Power Complementary Silicon Transistors
- High DC Current Gain —
- hFE = 2500 (Typ) @ IC = 4.0
- Type Designator: TIP122
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 5 V
Specification
Ic (mA) | Pd (mW) | Vce (max) | Vcb | hfe | @Ic |
---|---|---|---|---|---|
5 | 65 | 100 | 100 | 1000 | 500 |
TIP122 Equivalent/Alternate:
Application
- Darlington
- General–Purpose Amplifier
- Low–Speed Switching
You can download this datasheet for TIP122 NPN Power Darlington Transistor from the link given below: