TIP112 NPN Power Darlington Transistor – Datasheet

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The TIP112 is silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intended for use in medium power linear and switching applications

TIP112 Pinout

TIP112 Pin Configuration

Pin NoPin Name
1Base
2Collector
3Emitter
4Case (Collector)

TIP112 Key Features

  • High DC Current Gain —
    • hFE = 2500 (Typ) @ IC = 1.0 Adc
  • Collector–Emitter Sustaining Voltage — @ 30 mAdc
    • VCEO(sus) = 100 Vdc (Min) — TIP112
  • Low Collector–Emitter Saturation Voltage —
    • VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
  • Monolithic Construction with Built–in Base–Emitter Shunt Resistors
  • TO–220AB Compact Package
  • Type Designator: TIP112
  • Material of Transistor: Si
  • Polarity: NPN

Specification

Ic (mA)Pd (mW)Vce (max)Vcb hfe@Ic
25010010010001000

TIP112 Equivalent/Alternate:

  • TIP100, TIP101, TIP102, TIP105, TIP106, TIP107, TIP117

Application

  • Darlington
  • General–purpose amplifier
  • Low–Speed Switching

You can download this datasheet for TIP112 NPN Power Darlington Transistor from the link given below: