Contents
hide
MJE800 (NPN) Plastic Darlington complementary power transistor These devices are designed for general-purpose amplifier and 4.0Ampere low-speed switching applications.
MJE800 Pinout
MJE800 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Emitter |
| 2 | Collector |
| 3 | Base |
MJE800 Key Features
- High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc
- Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication
- Type Designator: MJE800
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 5 V
MJE800 Specification
| Ic (mA) | Pd | Vce (max) | Vcb | hfe | @Ic |
|---|---|---|---|---|---|
| 4 | 40 | 60 | 60 | 750 | 1500 |
MJE800 Equivalent/Alternate:
- MJE1101, MJE1102, MJE1103, MJE1123, MJE12007, MJE700
Application
- General–Purpose Amplifier
- Low–Speed Switching
- Darlington
You can download this datasheet for MJE800 NPN Darlington Power Transistor from the link given below:
