MJE13009 NPN High Power Transistor – Datasheet

The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuit

MJE13009 Pinout

MJE13009 Pin Configuration

Pin No	Pin Name
1	Base
2	Collector
3	Emitter
4	Case (Collector)

MJE13009 Key Features

• VCEO(sus) 400 V and 300 V
• Reverse Bias SOA with Inductive Loads @ TC = 100
  C
• Inductive Switching Matrix 3 to 12 Amp, 25 and 100
  C
  • tc @ 8 A, 100
    C is 120 ns (Typ).
• 700 V Blocking Capability
• Type Designator: MJE13009
• Material of Transistor: Si
• Polarity: NPN

MJE13009 Specification

Ic (mA)	Pd	Vce (max)	Vcb	hfe	@Ic	Ft
12	100	400	700	8-40	5000	4

MJE13009 Equivalent/Alternate:

MJE1100, MJE1101, MJE1102, MJE1103, MJE1123, MJE12007

Application

• Motor Controls
• Switching Regulators
• Deflection Circuits

You can download this datasheet for MJE13009 NPN High Power Transistor from the link given below: