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The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications.
MJ2501 Pinout
MJ2501 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Emitter |
| 3 | Collector |
MJ2501 Key Features
- Built-in Base-Emitter Shunt Resistors
- High DC current gain- hFE = 1000 (Min) @ IC = -5A
- Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Type Designator: MJ2501
- Material of Transistor: Si
- Polarity: PNP
- Maximum Emitter-Base Voltage |Veb|: 5 V
MJ2501 Specification
| Ic (mA) | Pd | Vce (max) | Vcb | hfe | @Ic |
|---|---|---|---|---|---|
| 10 | 150 | 80 | 80 | 1000 | 5000 |
MJ2501 Equivalent/Alternate:
- MJ21193G, MJ21194, MJ21194G, MJ21195, MJ3001
Application
- Power Linear
- Switching Application
You can download this datasheet for MJ2501 PNP Power Darlington Transistor from the link given below:
