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MJ11016 is a preferred device high-current complementary silicon transistor for use as output devices in complementary general purpose amplifier applications
MJ11016 Pinout
MJ11016 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Emitter |
| 3 | Collector |
MJ11016 Key Features
- High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc
- Monolithic Construction with Built–in Base Emitter Shunt Resistor
- Junction Temperature to +200C
- Type Designator: MJ11016
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 5 V
MJ11016 Specification
| Ic (mA) | Pd | Vce (max) | Vcb | hfe | @Ic |
|---|---|---|---|---|---|
| 30 | 200 | 120 | 120 | 50-600 | 5000 |
MJ11016 Equivalent/Alternate:
- MJ10004, MJ10004P, MJ10005, MJ10005P, MJ10006, MJ11015
Application
- General Purpose Amplifier
- Darlington
You can download this datasheet for MJ11016 NPN Power Darlington Transistor from the link given below:
