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MJ1001 NPN Complementary Power Darlington is silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.
MJ1001 Pinout
MJ1001 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Emitter |
| 3 | Collector |
MJ1001 Key Features
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.)
- High DC Current Gain- : hFE= 1000(Min.)@IC= 3A
- Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A
- Type Designator: MJ1001
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 5 V
MJ1001 Specification
| Ic (mA) | Pd | Vce (max) | Vcb | hfe | @Ic |
|---|---|---|---|---|---|
| 10 | 90 | 80 | 80 | 1000 | 3000 |
MJ1001 Equivalent/Alternate:
- MJ1000, MJ10000, MJ10001, MJ10002, MJ10003, MJ10004, MJ1000
Application
- Audio
- General Purpose Amplifier
You can download this datasheet for MJ1001 NPN Darlington Power Transistor from the link given below:
