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MJ1000 is silicon epitaxial-base transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901.
MJ1000 Pinout
MJ1000 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Emitter |
| 3 | Collector |
MJ1000 Key Features
- High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc
- Monolithic Construction with Built–in Base–Emitter Shunt Resistor
- Type Designator: MJ1000
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 5 V
MJ1000 Specification
| Ic (mA) | Pd | Vce (max) | Vcb | hfe |
|---|---|---|---|---|
| 10 | 90 | 60 | 60 | 750 |
MJ1000 Equivalent/Alternate:
- MJ10000, MJ10001, MJ10002, MJ10003, MJ10004, MJ1001
Application
- General Purpose Power Amplifier
- Switching Applications
You can download this datasheet for MJ1000 NPN Darlington Power Transistor from the link given below:
