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MBR20100 20A 100V Schottky Barrier Diode is designed for the use of the Schottky Barrier principle with a platinum barrier metal.
MBR20100 Pinout
MBR20100 Features
- Guard−Ring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- Epoxy Meets UL 94 V−0 @ 0.125 in
- Low Power Loss/High Efficiency
- High Surge Capacity
- Low Stored Charge Majority Carrier Conduction
- Shipped 50 units per plastic tube
MBR20100 Specification
| Mfr Package Description | LEAD Free, Plastic Package-2 |
| Diode Type | Rectifier Diode |
| Application | General Purpose |
| Diode Element Material | Silicon |
| Forward Voltage-Max (VF) | 0.88 V |
| Non-rep Pk Forward Current-Max | 280.0 A |
| Operating Temperature-Min | -55.0 Cel |
| Operating Temperature-Max | 150.0 Cel |
| Rep Pk Reverse Voltage-Max | 100.0 V |
| Reverse Current-Max | 1000.0 µA |
You can download this datasheet for MBR20100 20A 100V Schottky Barrier Diode from the link given below:
