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MBR10100 is 10A 100V Schottky Barrier Diode has many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.
MBR10100G Pinout
MBR10100G Features
- Guard−Ring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- Low Power Loss/High Efficiency
- High Surge Capacity
- Low Stored Charge Majority Carrier Conduction
MBR10100G Specification
| Diode Type | Rectifier Diode |
| Application | General Purpose |
| Diode Element Material | Silicon |
| Forward Voltage-Max (VF) | 0.95 V |
| Non-rep Pk Forward Current-Max | 150.0 A |
| Operating Temperature-Min | -65.0 Cel |
| Operating Temperature-Max | 150.0 Cel |
| Output Current-Max | 5.0 A |
| Rep Pk Reverse Voltage-Max | 100.0 V |
| Reverse Current-Max | 100.0 µA |
You can download this datasheet for MBR10100 10A 100V Schottky Barrier Diode from the link given below:
