MBR10100 10A 100V Schottky Barrier Diode

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MBR10100 is 10A 100V Schottky Barrier Diode has many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.

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MBR10100G Pinout

MBR10100G Features

Guard−Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction

MBR10100G Specification

Diode Type	Rectifier Diode
Application	General Purpose
Diode Element Material	Silicon
Forward Voltage-Max (VF)	0.95 V
Non-rep Pk Forward Current-Max	150.0 A
Operating Temperature-Min	-65.0 Cel
Operating Temperature-Max	150.0 Cel
Output Current-Max	5.0 A
Rep Pk Reverse Voltage-Max	100.0 V
Reverse Current-Max	100.0 µA