IRFR420 2.4A 400V N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
IRFR420 Pinout
IRFR420 Pin Configuration
Pin No | Pin Name |
---|---|
1 | Gate |
2 | Drain |
3 | Source |
IRFR420 Key Features
- 2.3A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
- Low gate charge ( typical 14 nC)
- Low Cross ( typical 10 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Type Designator: IRFR420
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRFR420 Specification
Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
---|---|---|---|---|
2.4 | 42 | 500 | 3 | 20 |
IRFR420 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- Fast Switching
- Switch Mode Power Supplies
- General Purpose Applications
You can download this datasheet for IRFR420 2.4A 400V N-Channel Power MOSFET from the link given below: