IRFR220N 5A 200V N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control
IRFR220 Pinout
IRFR220 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRFR220 Key Features
- 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V
- Low gate charge ( typical 12 nC)
- Low Cross ( typical 10 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Type Designator: IRFR220
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRFR220 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 4.8 | 42 | 200 | 0.8 | 10 |
IRFR220 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Type of Control Channel:
- N -Channel
- Low Gate to Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including
- Effective COSS to Simplify Design, (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current
Application
- High frequency DC-DC converters
You can download this datasheet for IRFR220N 5A 200V N-Channel Power MOSFET from the link given below:
