IRFBG30 3.1A 1000V N-Channel Power MOSFET – Datasheet

IRFBG30 3.1A 1000V N-Channel Power MOSFET provide the designer With the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its Wide acceptance throughout the industry.

IRFBG30 Pinout

IRFBG30 in Configuration

Pin No	Pin Name
1	Gate
2	Drain
3	Source

IRFBG30 Key Features

• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease Of paralleling
• Simple Drive Requirements
• Type Designator: IRFBG30
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel

IRFBG30 Specification

Id (A)	Pd (W)	Vds (max)	Rds (on)	Vgs (max)
3.1	125	1000	5	10

IRFBG30 Equivalent/Alternative

• IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201, IRF100B202

Application

• PFC stages
• Power supply ·
• Switching applications

You can download this datasheet for IRFBG30 3.1A 1000V N-Channel Power MOSFET from the link given below: