IRFBG30 3.1A 1000V N-Channel Power MOSFET provide the designer With the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its Wide acceptance throughout the industry.
IRFBG30 Pinout
IRFBG30 in Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRFBG30 Key Features
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease Of paralleling
- Simple Drive Requirements
- Type Designator: IRFBG30
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRFBG30 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 3.1 | 125 | 1000 | 5 | 10 |
IRFBG30 Equivalent/Alternative
- IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201, IRF100B202
Application
- PFC stages
- Power supply ·
- Switching applications
You can download this datasheet for IRFBG30 3.1A 1000V N-Channel Power MOSFET from the link given below:
