IRF9640 11A 200V P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits
IRF9640 Pinout
IRF9640 Pin Configuration
Pin No | Pin Name |
---|---|
1 | Gate |
2 | Drain |
3 | Source |
IRF9640 Key Features
- 11A, 200V
- RDS(ON) = 0.500Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Type Designator: IRF9640
- Type of Transistor: MOSFET
- Type of Control Channel: P -Channel
IRF9640 Specification
Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
---|---|---|---|---|
11 | 125 | 200 | 0.5 | 20 |
IRF9640 Equivalent/Alternative
- IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201, IRF100B202
Application
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
You can download this datasheet for IRF9640 11A 200V P-Channel Power MOSFET from the link given below: