IRF820 2.5A 500V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
IRF820 Pinout
IRF820 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF820 Key Features
- 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V
- Low gate charge ( typical 41 nC)
- Low Cross ( typical 35 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Type Designator: IRF820
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF820 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 3 | 75 | 500 | 3 | 20 |
IRF820 Equivalent/Alternative
- IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- High Current
- High Speed Switching
- Switch Mode Power Supplies (SMPS)
You can download this datasheet for IRF820 2.5A 500V N-Channel Power MOSFET from the link given below:
