IRF720 3.3A 400V N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
IRF720 Pinout
IRF720 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF720 Key Features
- 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V
- Low gate charge ( typical 14 nC)
- Low Cross ( typical 11 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Type Designator: IRF720
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF720 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 4.2 | 75 | 400 | 1.8 | 20 |
IRF720 Equivalent / Alternative
- IRF7205PBF, IRF7205PBF-1, IRF720SPBF, IRF7205, IRF720S, AUIRF7207Q
Application
- Switch Mode Power Supplies
- Electronic Lamp Ballasts
You can download this datasheet for IRF720 3.3A 400V N-Channel Power MOSFET from the link given below:
