IRF640 18A 200V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
IRF640 Pinout
IRF640 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF640 Key Features
- Low on-state resistance VDSS = 200 V
- Fast switching
- Low thermal resistance
- Extremely High dV/dt Capability
- Type Designator: IRF640
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF640 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 18 | 125 | 200 | 0.18 | 20 |
IRF640 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- Switching Application
- High Current Switching
- Uninterruptible Power Supply (UPS)
You can download this datasheet for IRF640 18A 200V N-Channel Power MOSFET from the link given below:
