IRF620 6A 200V N-Channel Power MOSFET N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control
IRF620 Pinout
IRF620 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF620 Key Features
- 5.0A, 200V, RDS(on) = 0.8Ω @VGS = 10 V
- Low gate charge ( typical 12 nC)
- Low Cross ( typical 10 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Type Designator: IRF620
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF620 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 5 | 70 | 200 | 0.8 | 20 |
Application
- High Current
- High Speed Switching
- Uninterruptible Power Supply (UPS)
- Motor Control
- Audio Amplifiers
- Industrial Actuators
You can download this datasheet for IRF620 6A 200V N-Channel Power MOSFET from the link given below:
