IRF610 3.3A 200V N-Channel Power MOSFET N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits
IRF610 Pinout
IRF610 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF610 Key Features
- 3.3A, 200V
- RDS(ON) = 1.500Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Type Designator: IRF610
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF610 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 3.3 | 20 | 200 | 1.5 | 20 |
IRF610 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- Switching Regulators
- Switching Convertors
- Motor Drivers
- Relay Drivers
- High Power Bipolar Switching Transistors
You can download this datasheet for IRF610 3.3A 200V N-Channel Power MOSFET from the link given below:
