IRF5305 31A 55V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
IRF5305 Pinout
IRF5305 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF5305 Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
- Type Designator: IRF5305
- Type of Transistor: MOSFET
- Type of Control Channel: P -Channel
IRF5305 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 31 | 110 | 55 | 0.06 | 10 |
IRF5305 Equivalent/Alternative
- IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201, IRF100B202
Application
- Reliable Device For Use In a Wide Variety Of Applications
You can download this datasheet for IRF5305 31A 55V P-Channel Power MOSFET from the link given below:
