IRF530 14A 100V N-Channel Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients
IRF530 Pinout
IRF530 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF530 Key Features
- Low on-state resistance VDSS = 100 V
- Fast switching
- Low thermal resistance
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- 175’C Operating Temperature
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF530 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 16 | 90 | 100 | 0.16 | 20 |
IRF530 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- High Current
- High Speed Switching
- Solenoid And Relay Drivers
- DC-DC & DC-AC Converter
- Automotive Environment (Injection, ABS, Air-Bag, Lamp Drivers etc)
You can download this datasheet for IRF530 14A 100V N-Channel Power MOSFET from the link given below:
