IRF520 10A 100V N-Channel Power MOSFET – Datasheet

IRF520 10A 100V N-Channel Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry

IRF520 Pinout

IRF520 Pin Configuration

Pin No	Pin Name
1	Gate
2	Drain
3	Source

IRF520 Key Features

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Type Designator: IRF520
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel

IRF520 Specification

Id (A)	Pd (W)	Vds (max)	Rds (on)	Vgs (max)
10	70	100	0.27	20

IRF520 Equivalent/Alternative

• IRF520NL, IRF520NLPBF, IRF520NPBF, IRF520N, IRF520NS

Application

• DC-DC & DC-AC Converters
• Motor Control
• Audio Amplifiers
• Automotive Environment (Injection, ABS, AIR-BAG, Lamp driver)
• High Current
• High Speed Switching

You can download this datasheet for IRF520 10A 100V N-Channel Power MOSFET from the link given below: