IRF250 30A 200V N-Channel Power MOSFET – Datasheet

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IRF250 30A 200V N-Channel Power MOSFET is N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits

IRF250 Pinout

IRF250 Pin Configuration

Pin NoPin Name
1Gate
2Source
3Drain (Flange)

IRF250 Key Features

  • 30A, 200V
  • RDS(ON) = 0.085Ω
  • Single Pulse Avalanche Energy Rated
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Type Designator: IRF250
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel

IRF250 Specification

Id (A)Pd (W)Vds (max)Rds (on)Vgs (max)
301502000.08520

IRF250 Equivalent/Alternative

  • IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201

Application

  • Switching Regulators
  • Switching Converters
  • Motor Drivers
  • Relay Drivers

You can download this datasheet for IRF250 30A 200V N-Channel Power MOSFET from the link given below: