MB156 600V 15A Bridge Rectifier – Datasheet
MB156 600V 15A Bridge Rectifier has a High reverse voltage of up to 1000V, overload rating is a … Read more
MB156 600V 15A Bridge Rectifier has a High reverse voltage of up to 1000V, overload rating is a … Read more
SB580 Schottky Barrier Diode Has High current capability, low forward voltage drop. SB580 use in low voltage, high-frequency … Read more
SB160 Schottky Barrier Diode with no thermal runaway and For use in low voltage, high-frequency inverters free wheeling, … Read more
SB540 Schottky Barrier Diode Has High current capability, low forward voltage drop high surge capability card ring for … Read more
SB360 Schottky Barrier Diode with no thermal runaway and For use in low voltage, high-frequency inverters free wheeling, … Read more
The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 … Read more
SB140 Schottky Barrier Diode with no thermal runaway and For use in low voltage, high-frequency inverters free wheeling, … Read more
MB1510 1000V 15A Bridge Rectifier has a High reverse voltage of up to 1000V, overload rating is a … Read more
BAT85 is a Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a … Read more
BAT86 is a Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a … Read more
The M2764A is a 65,536 bit UV erasable and electrically programmable memory EPROM. It is organized as 8,192 … Read more
BAT43 Schottky Barrier principle is a large area metal−to−silicon power diode featuring very low turn-on voltage and fast … Read more
BAT46 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode featuring very low turn-on … Read more
MB158 800V 15A Bridge Rectifier has a High reverse voltage of up to 1000V, overload rating is a … Read more
1N270 Germanium Diode is Optimized for Radio Frequency Response and Can be used in many AM, FM, and … Read more
BAT47 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode featuring very low turn-on … Read more