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BUZ21 19A 100V is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
BUZ21 Pinout
BUZ21 Pinout
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
BUZ21 Key Features
- 19A, 100V
- RDS(ON) = 0.100Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
Specification
| Id (mA) | Pd | Vds (max) | Vgs | Rds | cd |
|---|---|---|---|---|---|
| 21 | 105 | 100 | 20 | 0.1 | 1100pF |
Application
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
- High Power Bipolar Switching Transistors
You can download this datasheet for BUZ21 19A 100V N-Channel Power MOSFET from the link given below:
