BUZ11 33A 50V N-Channel Power MOSFET – Datasheet

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits

BUZ11 Pinout

BUZ11 Pin Configuration

Pin No	Pin Name
1	Gate
2	Drain
3	Source

BUZ11 Key Features

• Typical RDS(on) = 0.03 Ω
• Avalanche Rugged Technology
• 100% Avalanche Tested
• High Current Capability
• 175 C Operating Temperature
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device

Specification

Id (mA)	Pd	Vds (max)	Vgs	Rds	cd
36	120	50	20	0.04	1500pF

BUK456 Equivalent/Alternate:

• BUZ100L, BUZ100S, BUZ100SL-4, BUZ101, BUZ101L, BUZ101S

Application

• Switching Regulators
• Switching Converters
• Motor Drivers
• Relay Drivers

You can download this datasheet for BUZ11 33A 50V N-Channel Power MOSFET from the link given below: