BD681 NPN Power Transistor – Datasheet

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The BD681 is silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linear and switching applications

Power Transistor?

Transistors are three-terminal semiconductor electronic devices that can be used as switches or amplifiers. They can be of NPN or PNP polarity, and many different types are available with different power and switching speed ratings. If a transistor designed to these concepts can handle more than 1 A of collector current, it is generally considered to be a power transistor. Such transistors must have low output resistance to deliver large load currents, and good junction insulation to resist high voltages. They must also dissipate heat very quickly to avoid overheating.

BD681 Pinout

BD681 Pin Configuration

Pin NoPin Name
1Emitter
2Collector
3Base

BD681 Key Features

  • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 100V
  • DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • Type Designator: BD681
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Emitter-Base Voltage |Veb|: 5 V

BD681 Specification

Ic (mA)PdVce (max)Vcb hfe@Ic
4401001007501500

BD682 Equivalent/Alternate:

  • BD605, BD610, BD633, BD634, BD635, BD636, BD637, BD638, BD682

Application

  • General-Purpose Amplifier
  • Medium Power Linear
  • Switching Application

You can download this datasheet for BD681 NPN Power Transistor from the link given below: