BD679 NPN Power Transistor – Datasheet

The BD679 is silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linear and switching applications

Power Transistor?

Transistors are three-terminal semiconductor electronic devices that can be used as switches or amplifiers. They can be of NPN or PNP polarity, and many different types are available with different power and switching speed ratings. If a transistor designed to these concepts can handle more than 1 A of collector current, it is generally considered to be a power transistor. Such transistors must have low output resistance to deliver large load currents, and good junction insulation to resist high voltages. They must also dissipate heat very quickly to avoid overheating.

BD679 Pinout

BD679 Pin Configuration

Pin No	Pin Name
1	Emitter
2	Collector
3	Base

BD679 Key Features

• Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80V
• DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
• Type Designator: BD679
• Material of Transistor: Si
• Polarity: NPN
• Maximum Emitter-Base Voltage |Veb|: 5 V

BD679 Specification

Ic (mA)	Pd	Vce (max)	Vcb	hfe	@Ic
4	40	80	80	750	1500

BD679 Equivalent/Alternate:

• BD605, BD610, BD633, BD634, BD635, BD636, BD637, BD680

Application

• Medium Power Linear
• Switching Application
• General–Purpose Amplifier

You can download this datasheet for BD679 NPN Power Transistor from the link given below: