BD649 NPN Darlington power transistor is lot of variations for robust device performance and reliable operation application designed for use as complementary AF push-pull output stage applications
What is Darlington Transistor?
A Darlington transistor is also known as a Darlington pair is an electronics component made via the combination of two PNP or NPN BJTs (Bipolar Junction Transistor) connected in such a way that it allows a very high amount of current gain. Darlington pair is simply used in many applications where switching or amplification is crucial.
BD649 Pinout
BD649 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Base |
| 2 | Collector |
| 3 | Emitter |
BD649 Key Features
- Collector-Emitter Breakdown Voltage-
- : V(BR)CEO= 100V(Min)
- High DC Current Gain
- : hFE= 750(Min) @IC= 3A
- Low Saturation Voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Type Designator: BD649
- Material of Transistor: Si
- Polarity: NPN
- Maximum Emitter-Base Voltage |Veb|: 5 V
BD649 Specification
| Ic (mA) | Pd | Vce (max) | Vcb | hfe | @Ic |
|---|---|---|---|---|---|
| 8 | 62 | 100 | 120 | 750 | 3000 |
BD649 Equivalent/Alternate:
- BD605, BD610, BD633, BD634, BD635, BD636, BD637, BD650
Application
- Complementary AF Push-Pull Output Stage
- General Purpose Amplifier
You can download this datasheet for BD649 NPN Darlington Power Transistor from the link given below:
