The 29C040A is a 5-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory are organized as 524,288 words by 8 bits. The device offers access times up to 100 ns, and a low 220 mW power dissipation. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 5-volt-only Flash family.
To allow for simple in-system re-programmability, the 29C040A does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the 29C040A is performed on a sector basis; 256-bytes of data are loaded into the device and then simultaneously programmed.
29C040 Pinout
29C040 Pin Configuration
Pin No | Pin Name | Description |
---|---|---|
1 | A18 | Address Pin 18 |
2 | A16 | Address Pin 16 |
3 | A15 | Address Pin 15 |
4 | A12 | Address Pin 12 |
5 | A7 | Address Pin 7 |
6 | A6 | Address Pin 6 |
7 | A5 | Address Pin 5 |
8 | A4 | Address Pin 4 |
9 | A3 | Address Pin 3 |
10 | A2 | Address Pin 2 |
11 | A1 | Address Pin 1 |
12 | A0 | Address Pin 0 |
13 | I/O 0 | Data Inputs/Outputs 0 |
14 | I/O 1 | Data Inputs/Outputs 1 |
15 | I/O 2 | Data Inputs/Outputs 2 |
16 | GND | Ground Pin |
17 | I/O 3 | Data Inputs/Outputs 3 |
18 | I/O 4 | Data Inputs/Outputs 4 |
19 | I/O 5 | Data Inputs/Outputs 5 |
20 | I/O 6 | Data Inputs/Outputs 6 |
21 | I/O 7 | Data Inputs/Outputs 7 |
22 | CE’ | Chip Enable Pin |
23 | A10 | Address Pin 10 |
24 | OE’ | Output Enable Pin |
25 | A11 | Address Pin 11 |
26 | A9 | Address Pin 9 |
27 | A8 | Address Pin 8 |
28 | A13 | Address Pin 13 |
29 | A14 | Address Pin 14 |
30 | A17 | Address Pin 17 |
31 | WE | Write Enable Pin |
32 | VCC | Power Supply |
29C040 Key Feature
- Fast Read Access Time – 100 ns
- 5-Volt-Only Reprogramming
- Sector Program Operation
- Single Cycle Reprogram (Erase and Program)
- 2048 Sectors (256 bytes/sector)
- Internal Address and Data Latches for 256-Bytes
- Internal Program Control and Timer
- Hardware and Software Data Protection
- Two 16 KB Boot Blocks with Lockout
- Fast Sector Program Cycle Time – 10 ms
- DATA Polling for End of Program Detection
- Low Power Dissipation
- 40 mA Active Current
- 100 µA CMOS Standby Current
- Typical Endurance > 10,000 Cycles
- Single 5V ± 10% Supply
- CMOS and TTL Compatible Inputs and Outputs
You can download this datasheet for AT29C040 4M 120ns CMOS Flash Memory – Datasheet from the link given below: