AT29C040 4M 120ns CMOS Flash Memory – Datasheet

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The 29C040A is a 5-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory are organized as 524,288 words by 8 bits. The device offers access times up to 100 ns, and a low 220 mW power dissipation. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 5-volt-only Flash family.

To allow for simple in-system re-programmability, the 29C040A does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the 29C040A is performed on a sector basis; 256-bytes of data are loaded into the device and then simultaneously programmed.

29C040 Pinout

29C040 Pin Configuration

Pin NoPin NameDescription
1A18 Address Pin 18
2A16 Address Pin 16
3A15Address Pin 15
4A12 Address Pin 12
5A7 Address Pin 7
6A6 Address Pin 6
7A5 Address Pin 5
8A4 Address Pin 4
9A3 Address Pin 3
10A2 Address Pin 2
11A1 Address Pin 1
12A0 Address Pin 0
13I/O 0Data Inputs/Outputs 0
14 I/O 1Data Inputs/Outputs 1
15 I/O 2Data Inputs/Outputs 2
16GNDGround Pin
17 I/O 3Data Inputs/Outputs 3
18 I/O 4 Data Inputs/Outputs 4
19 I/O 5 Data Inputs/Outputs 5
20 I/O 6 Data Inputs/Outputs 6
21 I/O 7 Data Inputs/Outputs 7
22CE’Chip Enable Pin
23A10 Address Pin 10
24OE’Output Enable Pin
25A11 Address Pin 11
26A9 Address Pin 9
27A8 Address Pin 8
28A13 Address Pin 13
29A14 Address Pin 14
30A17 Address Pin 17
31WEWrite Enable Pin
32VCCPower Supply

29C040 Key Feature

  • Fast Read Access Time – 100 ns
  • 5-Volt-Only Reprogramming
  • Sector Program Operation
    • Single Cycle Reprogram (Erase and Program)
    • 2048 Sectors (256 bytes/sector)
    • Internal Address and Data Latches for 256-Bytes
  • Internal Program Control and Timer
  • Hardware and Software Data Protection
  • Two 16 KB Boot Blocks with Lockout
  • Fast Sector Program Cycle Time – 10 ms
  • DATA Polling for End of Program Detection
  • Low Power Dissipation
    • 40 mA Active Current
    • 100 µA CMOS Standby Current
  • Typical Endurance > 10,000 Cycles
  • Single 5V ± 10% Supply
  • CMOS and TTL Compatible Inputs and Outputs

You can download this datasheet for AT29C040 4M 120ns CMOS Flash Memory – Datasheet from the link given below: