The 29C010A is a 5-volt-only in-system Flash programmable and erasable read-only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8 bits. The device offers access times to 70 ns with a power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system re-programmability, the 29C010A does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the 29C010A is performed on a sector basis; 128-bytes of data are loaded into the device and then simultaneously programmed.
29C010 Pinout
29C010 Pin Configuration
| Pin No | Pin Name | Description |
|---|---|---|
| 1 | NC | No Connection |
| 2 | A16 | Address Pin 16 |
| 3 | A15 | Address Pin 15 |
| 4 | A12 | Address Pin 12 |
| 5 | A7 | Address Pin 7 |
| 6 | A6 | Address Pin 6 |
| 7 | A5 | Address Pin 5 |
| 8 | A4 | Address Pin 4 |
| 9 | A3 | Address Pin 3 |
| 10 | A2 | Address Pin 2 |
| 11 | A1 | Address Pin 1 |
| 12 | A0 | Address Pin 0 |
| 13 | I/O 0 | Data Inputs/Outputs 0 |
| 14 | I/O 1 | Data Inputs/Outputs 1 |
| 15 | I/O 2 | Data Inputs/Outputs 2 |
| 16 | GND | Ground Pin |
| 17 | I/O 3 | Data Inputs/Outputs 3 |
| 18 | I/O 4 | Data Inputs/Outputs 4 |
| 19 | I/O 5 | Data Inputs/Outputs 5 |
| 20 | I/O 6 | Data Inputs/Outputs 6 |
| 21 | I/O 7 | Data Inputs/Outputs 7 |
| 22 | CE’ | Chip Enable Pin |
| 23 | A10 | Address Pin 10 |
| 24 | OE’ | Output Enable Pin |
| 25 | A11 | Address Pin 11 |
| 26 | A9 | Address Pin 9 |
| 27 | A8 | Address Pin 8 |
| 28 | A13 | Address Pin 13 |
| 29 | A14 | Address Pin 14 |
| 30 | NC | No Connection |
| 31 | WE’ | Write Enable Pin |
| 32 | VCC | Power Supply |
29C010 Key Feature
- Fast Read Access Time – 70 ns
- 5-Volt-Only Reprogramming
- Sector Program Operation
- Single Cycle Reprogram (Erase and Program)
- 1024 Sectors (128 bytes/sector)
- Internal Address and Data Latches for 128-Bytes
- Two 8 KB Boot Blocks with Lockout
- Internal Program Control and Timer
- Hardware and Software Data Protection
- Fast Sector Program Cycle Time – 10 ms
- DATA Polling for End of Program Detection
- Low Power Dissipation
- 50 mA Active Current
- 100 µA CMOS Standby Current
- Typical Endurance > 10,000 Cycles
- Single 5V ±10% Supply
- CMOS and TTL Compatible Inputs and Outputs
- Commercial and Industrial Temperature Ranges
You can download this datasheet for AT29C010 1M 120ns CMOS Flash Memory – Datasheet from the link given below:
