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The 684000 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524, 288 words by 8 bits. The device is fabricated using Samsung’s advanced CMOS process. The 684000 has an output enable input for precise control of the data outputs also has a chip enable inputs for the minimum current power-down mode The 684000 has been designed for high speed and low power applications. It is particularly well suited for battery backup non-volatile memory applications.
684000 Pinout
684000 Pin Configuration
Pin No | Pin Name | Description |
---|---|---|
1 | A18 | Address Pin 18 |
2 | A16 | Address Pin 16 |
3 | A14 | Address Pin 14 |
4 | A12 | Address Pin 12 |
5 | A7 | Address Pin 7 |
6 | A6 | Address Pin 6 |
7 | A5 | Address Pin 5 |
8 | A4 | Address Pin 4 |
9 | A3 | Address Pin 3 |
10 | A2 | Address Pin 2 |
11 | A1 | Address Pin 1 |
12 | A0 | Address Pin 0 |
13 | I/O 1 | Data Inputs/Outputs 1 |
14 | I/O 2 | Data Inputs/Outputs 2 |
15 | I/O 3 | Data Inputs/Outputs 3 |
16 | VSS | Ground Pin |
17 | I/O 4 | Data Inputs/Outputs 4 |
18 | I/O 5 | Data Inputs/Outputs 5 |
19 | I/O 6 | Data Inputs/Outputs 6 |
20 | I/O 7 | Data Inputs/Outputs 7 |
21 | I/O 8 | Data Inputs/Outputs 8 |
22 | CS’ | Chip Select Pin |
23 | A10 | Address Pin 10 |
24 | OE’ | Output Enable Pin |
25 | A11 | Address Pin 11 |
26 | A9 | Address Pin 9 |
27 | A8 | Address Pin 8 |
28 | A13 | Address Pin 13 |
29 | WE’ | Write Enable Pin |
30 | A17 | Address Pin 17 |
31 | A15 | Address Pin 15 |
32 | VCC | Power Supply Pin |
684000 Key Feature
- Fast Access Time : 55, 70, 85, 100ns(Max)
- Low Power Dissipation
- Standby (CMOS) :2.57mW(Max)
- 550 W(Max.) L-Version
- 110 W(Max.) L-L-Version
- Operating :385mW/MHz{Max.)
- Single 5V 10% power supply
- TTL Compatible inputs and outputs
- Three-State Output
- Battery back-up operation
- Data retention
- 2V([Min.) :full version
- 2.4V(Min.): Standard Version
You can download this datasheet for 684000 512Kx8 CMOS RAM – Datasheet from the link given below: