684000 512Kx8 CMOS RAM – Datasheet

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The 684000 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524, 288 words by 8 bits. The device is fabricated using Samsung’s advanced CMOS process. The 684000 has an output enable input for precise control of the data outputs also has a chip enable inputs for the minimum current power-down mode The 684000 has been designed for high speed and low power applications. It is particularly well suited for battery backup non-volatile memory applications.

684000 Pinout

684000 Pin Configuration

Pin NoPin NameDescription
1A18 Address Pin 18
2A16 Address Pin 16
3 A14 Address Pin 14
4A12Address Pin 12
5A7 Address Pin 7
6A6 Address Pin 6
7A5 Address Pin 5
8A4 Address Pin 4
9A3 Address Pin 3
10A2Address Pin 2
11A1Address Pin 1
12A0 Address Pin 0
13I/O 1Data Inputs/Outputs 1
14I/O 2Data Inputs/Outputs 2
15I/O 3Data Inputs/Outputs 3
16VSSGround Pin
17I/O 4Data Inputs/Outputs 4
18I/O 5Data Inputs/Outputs 5
19I/O 6Data Inputs/Outputs 6
20I/O 7Data Inputs/Outputs 7
21 I/O 8 Data Inputs/Outputs 8
22CS’Chip Select Pin
23A10Address Pin 10
24OE’Output Enable Pin
25A11 Address Pin 11
26A9Address Pin 9
27A8Address Pin 8
28A13Address Pin 13
29WE’Write Enable Pin
30A17 Address Pin 17
31A15 Address Pin 15
32VCCPower Supply Pin

684000 Key Feature

  • Fast Access Time : 55, 70, 85, 100ns(Max)
  • Low Power Dissipation
  • Standby (CMOS) :2.57mW(Max)
    • 550 W(Max.) L-Version
    • 110 W(Max.) L-L-Version
  • Operating :385mW/MHz{Max.)
  • Single 5V 10% power supply
  • TTL Compatible inputs and outputs
  • Three-State Output
  • Battery back-up operation
  • Data retention
    • 2V([Min.) :full version
    • 2.4V(Min.): Standard Version

You can download this datasheet for 684000 512Kx8 CMOS RAM – Datasheet from the link given below: