29C256 256k 120ns CMOS Flash Memory – Datasheet

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The 29C256 is a five-volt-only in-system Flash programmable and erasable read-only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. The device offers access times to 70 ns with a power dissipation of just 275 mW. When the device is deselected, the CMOS standby current is less than 300 µA. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from a static RAM. Reprogramming the AT29C256 is performed on a page basis; 64 bytes of data are loaded into the device and then simultaneously programmed. The contents of the entire device may be erased by using a six-byte software code (although erasure before programming is not needed)

29C256 Pinout

29C256 Pin Configuration

Pin NoPin NameDescription
1DCDon’t Connect
2WE’Write Enable Pin
3A12Address Pin 12
4A7 Address Pin 7
5A6 Address Pin 6
6A5 Address Pin 5
7A4 Address Pin 4
8A3 Address Pin 3
9A2 Address Pin 2
10A1 Address Pin 1
11A0 Address Pin 0
12NCNo Connection
13I/O 0Data Inputs/Outputs 0
14 I/O 1Data Inputs/Outputs 1
15 I/O 2Data Inputs/Outputs 2
16GNDGround Pin
17DC Don’t Connect
18 I/O 3Data Inputs/Outputs 3
19 I/O 4 Data Inputs/Outputs 4
20 I/O 5 Data Inputs/Outputs 5
21 I/O 6 Data Inputs/Outputs 6
22 I/O 7 Data Inputs/Outputs 7
23CE’Chip Enable Pin
24A10 Address Pin 10
25OE’Output Enable Pin
26NCNo Connection
27A11 Address Pin 11
28A9 Address Pin 9
29A8 Address Pin 8
30A13 Address Pin 13
31A14 Address Pin 14
32VCCPower Supply

29C256 Key Feature

  • Fast Read Access Time – 70 ns
  • 5-Volt-Only Reprogramming
  • Sector Program Operation
    • Single Cycle Reprogram (Erase and Program)
    • Internal Address and Data Latches for 64-Bytes
  • Internal Program Control and Timer
  • Hardware and Software Data Protection
  • Two 16 KB Boot Blocks with Lockout
  • Fast Sector Program Cycle
    • Page (64 Byte) Program Time – 10 ms
    • Chip Erase Time – 10 ms
  • DATA Polling for End of Program Detection
  • Low Power Dissipation
    • 50 mA Active Current
    • 300 µA CMOS Standby Current
  • Typical Endurance > 10,000 Cycles
  • Single 5V ± 10% Supply
  • CMOS and TTL Compatible Inputs and Outputs

You can download this datasheet for 29C256 256k 120ns CMOS Flash Memory – Datasheet from the link given below: