AT29C256 256k 120ns CMOS Flash Memory – Datasheet

The 29C256 is a five-volt-only in-system Flash programmable and erasable read-only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. The device offers access times to 70 ns with a power dissipation of just 275 mW. When the device is deselected, the CMOS standby current is less than 300 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

To allow for simple in-system re-programmability, the 29C256 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from a static RAM. Reprogramming the 29C256 is performed on a page basis; 64 bytes of data are loaded into the device and then simultaneously programmed.

29C256 Pinout

29C256 Pin Configuration

Pin No	Pin Name	Description
1	DC	Don’t Connect
2	WE	Write Enable Pin
3	A12	Address Pin 12
4	A7	Address Pin 7
5	A6	Address Pin 6
6	A5	Address Pin 5
7	A4	Address Pin 4
8	A3	Address Pin 3
9	A2	Address Pin 2
10	A1	Address Pin 1
11	A0	Address Pin 0
12	NC	No Connection
13	I/O 0	Data Inputs/Outputs 0
14	I/O 1	Data Inputs/Outputs 1
15	I/O 2	Data Inputs/Outputs 2
16	GND	Ground Pin
17	DC	Don’t Connect
18	I/O 3	Data Inputs/Outputs 3
19	I/O 4	Data Inputs/Outputs 4
20	I/O 5	Data Inputs/Outputs 5
21	I/O 6	Data Inputs/Outputs 6
22	I/O 7	Data Inputs/Outputs 7
23	CE’	Chip Enable Pin
24	A10	Address Pin 10
25	OE’	Output Enable Pin
26	NC	No Connection
27	A11	Address Pin 11
28	A9	Address Pin 9
29	A8	Address Pin 8
30	A13	Address Pin 13
31	A14	Address Pin 14
32	VCC	Power Supply

29C256 Key Feature

• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Page Program Operation
  • Single Cycle Reprogram (Erase and Program)
  • Internal Address and Data Latches for 64 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Program Cycle Times
  • Page (64 Byte) Program Time – 10 ms
  • Chip Erase Time – 10 ms
• DATA Polling for End of Program Detection
• Low-power Dissipation
  • 50 mA Active Current
  • 300 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges

You can download this datasheet for AT29C256 256k 120ns CMOS Flash Memory – Datasheet from the link given below: