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1N6263 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode featuring high breakdown, low turn-on voltage and ultrafast switching.
1N6263 Features
- High breakdown
- Low turn-on voltage
- Ultrafast switching
1N6263 Specification
| Mfr Package Description | GLASS PACKAGE-2, DO-35 |
| Diode Type | RECTIFIER DIODE |
| Diode Element Material | SILICON |
| Forward Voltage-Max (VF) | 1.0 V |
| Non-rep Pk Forward Current-Max | 2.0 A |
| Operating Temperature-Max | 200.0 Cel |
| Output Current-Max | 0.015 A |
| Peak Reflow Temperature (Cel) | 235 |
| Power Dissipation-Max | 0.4 W |
| Rep Pk Reverse Voltage-Max | 60.0 V |
| Reverse Recovery Time-Max | 0.001 µs |
You can download this datasheet for 1N6263 Small Signal Schottky Barrier Diode from the link given below:
