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1N5817 is a Schottky barrier rectifier diode mounted in an axial lead epoxy case using metal to silicon junction to yield forward voltage drop and instantaneous reverse recovery times.
1N5817 Features
- Extremely Low Forward Voltage
- Low Stored Charge
- Majority Carrier Conduction
- Low Power Loss/High Efficiency
- These are Pb−Free Devices
1N5817 Specification
| Mfr Package Description | PLASTIC PACKAGE-2, DO-41 |
| Diode Type | RECTIFIER DIODE |
| Diode Element Material | SILICON |
| Forward Voltage-Max (VF) | 0.45 V |
| Non-rep Pk Forward Current-Max | 25.0 A |
| Operating Temperature-Min | -65.0 Cel |
| Operating Temperature-Max | 150.0 Cel |
| Output Current-Max | 1.0 A |
| Rep Pk Reverse Voltage-Max | 20.0 V |
Application
- Low voltage
- High frequency inverters
- Reverse polarity protection
You can download this datasheet for 1N5817 Schottky Barrier Diode from the link given below:
