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The 1N4448 is high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
1N4448 Features
- Hermetically sealed leaded glass SOD27 (DO-35) package
- High switching speed: max. 4 ns
- General application
- Continuous reverse voltage: max. 75 V
- Repetitive peak reverse voltage: max. 75 V
- Repetitive peak forward current: max. 450 mA.
1N4448 Specification
Mfr Package Description | DO-35, 2 PIN |
Diode Type | RECTIFIER DIODE |
Diode Element Material | SILICON |
Forward Voltage-Max (VF) | 0.62 V |
Non-rep Pk Forward Current-Max | 2.0 A |
Operating Temperature-Min | -55.0 Cel |
Operating Temperature-Max | 175.0 Cel |
Output Current-Max | 0.2 A |
Power Dissipation-Max | 0.5 W |
Rep Pk Reverse Voltage-Max | 100.0 V |
Reverse Recovery Time-Max | 0.004 µs |
Application
- High-speed switching.
You can download this datasheet for 1N4448 75V 200mA General Purpose Diode from the link given below: