Contents
hide
The 1N4149 is high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
1N4149 Features
- Silicon Epitaxial Planar Diode
- High reliability
- Low reverse current
- Low forward voltage drop
- High speed switching
1N4149 Specification
| Mfr Package Description | HERMETIC SEALED, GLASS PACKAGE-2 |
| Diode Type | RECTIFIER DIODE |
| Diode Element Material | SILICON |
| Forward Voltage-Max (VF) | 1.0 V |
| Non-rep Pk Forward Current-Max | 0.5 A |
| Operating Temperature-Min | -65.0 Cel |
| Operating Temperature-Max | 175.0 Cel |
| Output Current-Max | 0.2 A |
| Power Dissipation-Max | 0.5 W |
| Rep Pk Reverse Voltage-Max | 100.0 V |
| Reverse Recovery Time-Max | 0.004 µs |
You can download this datasheet for 1N4149 100V 200mA General Purpose Diode from the link given below:
