MBR10100 10A 100V Schottky Barrier Diode – Datasheet

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MBR10100 is 10A 100V Schottky Barrier Diode has many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.

MBR10100G Pinout

MBR10100G Features

  • Guard−Ring for Stress Protection
  • Low Forward Voltage
  • 175°C Operating Junction Temperature
  • Low Power Loss/High Efficiency
  • High Surge Capacity
  • Low Stored Charge Majority Carrier Conduction

MBR10100G Specification

Diode TypeRectifier Diode
ApplicationGeneral Purpose
Diode Element MaterialSilicon
Forward Voltage-Max (VF)0.95  V
Non-rep Pk Forward Current-Max150.0  A
Operating Temperature-Min-65.0  Cel
Operating Temperature-Max150.0  Cel
Output Current-Max5.0  A
Rep Pk Reverse Voltage-Max100.0  V
Reverse Current-Max100.0  µA

You can download this datasheet for MBR10100 10A 100V Schottky Barrier Diode from the link given below: