MUR8100E 8A 1000V Ultra-Fast Recovery – Datasheet

MUR8100E 8A & 1000V Ultrafast Recovery Diode is a series of switch mode power rectifiers and is designed for use in switching power supplies, inverters and as free wheeling diodes.

MUR8100E Pinout

MUR8100E Features

• 20 m J Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• Pb−Free Packages are Available

MUR8100E Specification

Diode Type	Rectifier Diode
Application	Ultra Fast Recovery
Diode Element Material	Silicon
Forward Voltage-Max (VF)	1.8  V
Non-rep Pk Forward Current-Max	100.0  A
Operating Temperature-Min	-65.0  Cel
Operating Temperature-Max	175.0  Cel
Output Current-Max	8.0  A
Rep Pk Reverse Voltage-Max	1000.0  V
Reverse Current-Max	25.0  µA
Reverse Recovery Time-Max	0.1  µs

You can download this datasheet for MUR8100E 8A 1000V Ultra-Fast Recovery from the link given below: