2N6059 NPN Power Darlington Transistor – Datasheet

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The 2N6059 is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration mounted in a Jedec TO-3 metal case. It is intended for use in power linear and low-frequency switching applications.

What is Darlington Transistor?

A Darlington transistor is also known as a Darlington pair is an electronics component made via the combination of two PNP or NPN BJTs (Bipolar Junction Transistor) connected in such a way that it allows a very high amount of current gain. Darlington pair is simply used in many applications where switching or amplification is crucial.

2N6059 Pinout

2N6059 Pin Configuration

Pin NoPin Name
1Base
2Emitter
3Collector

2N6059 Key Features

  • Built-in Base-Emitter Shunt Resistors
  • High DC current gain hFE = 750 (Min) @ IC = 6A
  • Collector-Emitter Sustaining Voltage VCEO(SUS)= 100V(Min)
  • Type Designator: 2N6059
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Emitter-Base Voltage |Veb|: 10 V

Specification

Ic (mA)Pd (mW)Vce (max)Vcb hfeFT (MHz)
121501001007504

2N6059 Equivalent/Alternate:

  • 2N60, 2N600, 2N6000, 2N6001, 2N6002, 2N6052

Application

  • General Purpose Amplifier
  • Low Frequency Switching

You can download this datasheet for 2N6059 NPN Power Darlington Transistor from the link given below: