IRFR220N 5A 200V N-Channel Power MOSFET – Datasheet

2,245 views

IRFR220N 5A 200V N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control

IRFR220 Pinout

IRFR220 Pin Configuration

Pin NoPin Name
1Gate
2Drain
3Source

IRFR220 Key Features

  • 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V
  • Low gate charge ( typical 12 nC)
  • Low Cross ( typical 10 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Type Designator: IRFR220
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel

IRFR220 Specification

Id (A)Pd (W)Vds (max)Rds (on)Vgs (max)
4.8422000.810

IRFR220 Equivalent/Alternative

  • IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201

Type of Control Channel:

  • N -Channel
  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including
  • Effective COSS to Simplify Design, (See App. Note AN1001)
  • Fully Characterized Avalanche Voltage and Current

Application

  • High frequency DC-DC converters

You can download this datasheet for IRFR220N 5A 200V N-Channel Power MOSFET from the link given below: