IRFR120 9.4A 100V N-Channel Power MOSFET is advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRFR120 Pinout
IRFR120 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRFR120 Key Features
- Surface Mount (IRFR120N)
- Straight Lead (IRFU120N)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Type Designator: IRFR120
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRFR120 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 8.4 | 42 | 100 | 0.27 | 20 |
IRFR120 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD,
Application
- Fast switching
You can download this datasheet for IRFR120 9.4A 100V N-Channel Power MOSFET from the link given below:
