IRF9630 6.5A 200V P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits
IRF9630 Pinout
IRF9630 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF9630 Key Features
- 6.5A, 200V
- RDS(ON) = 0.800Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Type Designator: IRF9630
- Type of Transistor: MOSFET
- Type of Control Channel: P -Channel
IRF9630 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 6.5 | 75 | 200 | 0.8 | 20 |
IRF9630 Equivalent/Alternative
- IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
You can download this datasheet for IRF9630 6.5A 200V P-Channel Power MOSFET from the link given below:
