IRF3315 27A 150V N-Channel Power MOSFET Rectifier is utilize to advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry
IRF3315 Pinout
IRF3315 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRF3315 Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Type Designator: IRF3315
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
IRF3315 Specification
| Id (A) | Pd (W) | Vds (max) | Rds (on) | Vgs (max) |
|---|---|---|---|---|
| 21 | 94 | 150 | 0.082 | 10 |
IRF3315 Equivalent/Alternative
- IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Application
- Reliable Device For Use In a Wide Variety Of Applications
You can download this datasheet for IRF3315 27A 150V N-Channel Power MOSFET from the link given below:
