IRF830 4.5A 500V N-Channel Power MOSFET – Datasheet

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IRF830 4.5A 500V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources

IRF830 Pinout

IRF830 Pin Configuration

Pin NoPin Name
1Gate
2Drain
3Source

IRF830 Key Features

  • 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
  • Low gate charge ( typical 27 nC)
  • Low Cross ( typical 17 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Type Designator: IRF830
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel

IRF830 Specification

Id (A)Pd (W)Vds (max)Rds (on)Vgs (max)
4.51005001.520

IRF830 Equivalent/Alternative

  • IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201

Application

  • High Current
  • High Speed Switching
  • Switch Mode Power Supplies (SMPS)

You can download this datasheet for IRF830 4.5A 500V N-Channel Power MOSFET from the link given below: