IRF820 2.5A 500V N-Channel Power MOSFET – Datasheet

IRF820 2.5A 500V N-Channel power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

IRF820 Pinout

IRF820 Pin Configuration

Pin No	Pin Name
1	Gate
2	Drain
3	Source

IRF820 Key Features

• 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Cross ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Type Designator: IRF820
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel

IRF820 Specification

Id (A)	Pd (W)	Vds (max)	Rds (on)	Vgs (max)
3	75	500	3	20

IRF820 Equivalent/Alternative

• IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201

Application

• High Current
• High Speed Switching
• Switch Mode Power Supplies (SMPS)

You can download this datasheet for IRF820 2.5A 500V N-Channel Power MOSFET from the link given below: