BUZ21 19A 100V N-Channel Power MOSFET – Datasheet

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BUZ21 19A 100V is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

BUZ21 Pinout

BUZ21 Pinout

Pin NoPin Name
1Gate
2Drain
3Source

BUZ21 Key Features

  • 19A, 100V
  • RDS(ON) = 0.100Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device

Specification

Id (mA)PdVds (max)VgsRdscd
21105100200.11100pF

Application

  • Switching Regulators
  • Switching Converters
  • Motor Drivers
  • Relay Drivers
  • High Power Bipolar Switching Transistors

You can download this datasheet for BUZ21 19A 100V N-Channel Power MOSFET from the link given below: