MJE800 NPN Darlington Power Transistor – Datasheet

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MJE800 (NPN) Plastic Darlington complementary power transistor These devices are designed for general-purpose amplifier and 4.0Ampere low-speed switching applications.

MJE800 Pinout

MJE800 Pin Configuration

Pin NoPin Name
1Emitter
2Collector
3Base

MJE800 Key Features

  • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication
  • Type Designator: MJE800
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Emitter-Base Voltage |Veb|: 5 V

MJE800 Specification

Ic (mA)PdVce (max)Vcb hfe@Ic
44060607501500

MJE800 Equivalent/Alternate:

  • MJE1101, MJE1102, MJE1103, MJE1123, MJE12007, MJE700

Application

  • General–Purpose Amplifier
  • Low–Speed Switching
  • Darlington

You can download this datasheet for MJE800 NPN Darlington Power Transistor from the link given below: